ThermalEast
// SPEC · Refractory Raw Materials

Black Silicon Carbide Fine Grit F100–F220

Black silicon carbide F100–F220 fine grit (SiC 98%) for precision lapping, optical glass polishing, and semiconductor back-grinding — delivers Ra ≤0.8 μm surface finish on ceramics and hard metals.

Refractory Raw MaterialsMax Temp: 1600°CGB/T 2481.1, FEPA F

// Key Features

  • Fine grit enables Ra ≤0.8 μm surface finish on ceramics and hardened metals
  • Tight particle size distribution minimizes scratching in precision lapping operations
  • Low free carbon content prevents contamination of optically sensitive substrates
  • Consistent Mohs 9.5 hardness ensures repeatable stock removal in fine grinding cycles

// Technical Specifications

SiC (%)≥98.0
Fe2O3 (%)≤0.15
Free C (%)≤0.25
Hardness (Mohs)9.5
Available Grain SizesF100, F120, F150, F180, F220

// Applications

Lapping machine tooling for cemented carbide and ceramic componentsOptical lens and crystal polishing equipmentSemiconductor silicon wafer back-grinding operationsFine grinding wheel and honing stone productionHard chrome and thermal spray coating surface finishing
// Quick Specs
Max Temperature1600°C
Thermal Conductivity120 W/(m·K) at 25°C
Density3.21 g/cm³
StandardGB/T 2481.1, FEPA F
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