// SPEC · Refractory Raw Materials
Green Silicon Carbide SiC 99% High Purity
High-purity green silicon carbide SiC 99% with Fe2O3 ≤0.05% for semiconductor wafer lapping, optical component precision grinding, and cemented carbide tool blank grinding wheel manufacturing.
// Key Features
- SiC ≥99% purity eliminates metallic contamination in semiconductor-grade applications
- Superior crystal perfection yields sharper fracture edges than standard black SiC
- Ultra-low Fe2O3 ≤0.05% meets stringent cleanliness requirements for electronics processing
- Higher thermal stability supports precision machining of advanced ceramics and sapphire
// Technical Specifications
| SiC (%) | ≥99.0 |
| Fe2O3 (%) | ≤0.05 |
| Free C (%) | ≤0.10 |
| Hardness (Mohs) | 9.5 |
| Available Grain Sizes | F60–F1200, P80–P2500 |
// Applications
Semiconductor silicon wafer lapping and chemical-mechanical polishingOptical lens, prism, and sapphire substrate precision grindingCemented carbide and CBN tool blank grinding wheel productionPhotovoltaic silicon ingot wire-saw slicing operationsAdvanced SiC power device substrate and ceramic component machining
// Quick Specs
Max Temperature1700°C
Thermal Conductivity120 W/(m·K) at 25°C
Density3.21 g/cm³
StandardGB/T 2481.1, FEPA F/P
// Get Pricing
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